Print Email Facebook Twitter Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits Title Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits Author Petit, L. (TU Delft QCD/Veldhorst Lab) Boter, J.M. (TU Delft QCD/Vandersypen Lab) Eenink, H.G.J. (TU Delft QCD/Veldhorst Lab) Droulers, G. (TU Delft QCD/Vandersypen Lab) Tagliaferri, M.L.V. (TU Delft QCD/Veldhorst Lab) Li, R. (TU Delft QCD/Veldhorst Lab) Franke, D.P. (TU Delft QCD/Veldhorst Lab) Singh, K. J. (Intel Labs) Clarke, J. S. (Intel Labs) Schouten, R.N. (TU Delft ALG/General) Dobrovitski, V.V. (TU Delft QID/Dobrovitski Group) Vandersypen, L.M.K. (TU Delft QCD/Vandersypen Lab; TU Delft QN/Vandersypen Lab) Veldhorst, M. (TU Delft QCD/Veldhorst Lab) Date 2018-08-14 Abstract We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures. To reference this document use: http://resolver.tudelft.nl/uuid:9c394d7f-594d-44ac-ac3e-719c81ebcca2 DOI https://doi.org/10.1103/PhysRevLett.121.076801 ISSN 0031-9007 Source Physical Review Letters, 121 (7), 1-5 Part of collection Institutional Repository Document type journal article Rights © 2018 L. Petit, J.M. Boter, H.G.J. Eenink, G. Droulers, M.L.V. Tagliaferri, R. Li, D.P. Franke, K. J. Singh, J. S. Clarke, R.N. Schouten, V.V. Dobrovitski, L.M.K. Vandersypen, M. Veldhorst Files PDF PhysRevLett.121.076801.pdf 611.13 KB Close viewer /islandora/object/uuid:9c394d7f-594d-44ac-ac3e-719c81ebcca2/datastream/OBJ/view