Print Email Facebook Twitter Light-Induced Effects on the a-Si Title Light-Induced Effects on the a-Si: H/c-Si Heterointerface Author Vasudevan, R.A. (TU Delft Photovoltaic Materials and Devices) Poli, Isabella (External organisation) Deligiannis, D. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy) Smets, A.H.M. (TU Delft Photovoltaic Materials and Devices) Department Electrical Sustainable Energy Date 2016-12-16 Abstract Light-induced effects on the minority carrier lifetime of silicon heterojunction structures are studied through multiple-exposure photoconductance decay (MEPCD). MEPCD monitors the effect of the measurement flash from a photoconductance decay setup on a sample over thousands of measurements. Varying the microstructure of the intrinsic hydrogenated amorphous silicon (a-Si:H) used for passivation of n-Type crystalline silicon (c-Si) showed that passivating films rich in voids produce light-induced improvement, while denser films result in samples that are susceptible to light-induced degradation. Light-induced degradation is linked to an increase in dangling bond density at the a-Si:H/c-Si interface, while light-induced improvements are linked to charging at the a-Si:H/c-Si interface. Furthermore, doped a-Si:H is added to make samples with an emitter and back surface field (BSF). These doped layers have a significant effect on the light-induced kinetics on minority carrier lifetime. Emitter samples exhibit consistent light-induced improvement, while BSF samples exhibit light-induced degradation. This is explained through negative charging at the BSF and positive charging at the emitter. Full precursors with a BSF and emitter exhibit different kinetics based on which side is being illuminated. This suggests that the light-induced charging at the a-Si:H/c-Si interface can only occur when a-Si:H has sufficient generation. Subject Hydrogenated amorphous silicon (a-Si:H)light-induced degradation (LID)silicon heterojunction (SHJ) To reference this document use: http://resolver.tudelft.nl/uuid:9dc89b86-b554-4593-8f17-cd83db6b8633 DOI https://doi.org/10.1109/JPHOTOV.2016.2633800 ISSN 2156-3381 Source IEEE Journal of Photovoltaics, 7 (2), 656-664 Part of collection Institutional Repository Document type journal article Rights © 2016 R.A. Vasudevan, Isabella Poli, D. Deligiannis, M. Zeman, A.H.M. Smets Files PDF 27772777.pdf 750.6 KB Close viewer /islandora/object/uuid:9dc89b86-b554-4593-8f17-cd83db6b8633/datastream/OBJ/view