Print Email Facebook Twitter C-V profiling of ultra-shallow junctions using a buried layer with stepped doping Title C-V profiling of ultra-shallow junctions using a buried layer with stepped doping Author Xu, C. Contributor Nanver, L.K. (mentor) Popadic, M. (mentor) Faculty Electrical Engineering, Mathematics and Computer Science Date 2009-02-25 Abstract The paper investigates two-sided capacitance-voltage (C-V) technique for application in doping profile characterization of Si ultra shallow p+-n junctions. Stepped doping profile in the n region is designed for the accurate determination of xn0, a crucial parameter for the extraction of the doping profile in the p region. Medici simulations are carried out for the C-VR relationships of the p+-n and n-Schottky junctions with the same step-like n profile. The xn0 can be determined with an accuracy of 1.7 nm by a criteria developed in this work. And the doping profile in the p+ doped region can finally be extracted and shown to be in good agreement with the Medici simulation results. Subject two-sided junctionc-vultra-shallow junctions To reference this document use: http://resolver.tudelft.nl/uuid:9e21bbb7-d034-4f10-8a28-3674187a0e59 Publisher TU Delft, Electrical Engineering, Mathematics, Computer Sci, Microelectronics Part of collection Student theses Document type master thesis Rights (c) 2009 Xu, C. Files PDF ewi_xu_2009.pdf 1.13 MB Close viewer /islandora/object/uuid:9e21bbb7-d034-4f10-8a28-3674187a0e59/datastream/OBJ/view