Print Email Facebook Twitter Terahertz Raman laser based on silicon doped with phosphorus Title Terahertz Raman laser based on silicon doped with phosphorus Author Pavlov, S.G. Hübers, H.W. Böttger, U. Zhukavin, R.K. Shastin, V.N. Hovenier, J.N. Redlich, B. Abrosimov, N.V. Riemann, H. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2008-03-04 Abstract Raman-type stimulated emission at frequencies between 5.0 and 5.2?THz as well as between 6.1 and 6.4?THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5?K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are close to the frequencies of the intracenter laser lines which originate from the 2p0 and 2p± phosphorus states. The Stokes shift of 3.16?THz is equal to the difference between the energies of the phosphorus ground state, 1s(A1), and the 1s(E) excited state. Subject elemental semiconductorsexcited statesground statesphosphorusphotoexcitationRaman laserssemiconductor laserssiliconstimulated emissionsubmillimetre wave lasers To reference this document use: http://resolver.tudelft.nl/uuid:a56932c8-5e76-4fb0-b72f-29cd7b99bc86 DOI https://doi.org/10.1063/1.2890717 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v92/i9/p091111/s1 Source Applied Physics Letters, 92 (9), 2008 Part of collection Institutional Repository Document type journal article Rights (c) 2008 The Author(s); American Institute of Physics Files PDF Hovenier_2008.pdf 389.7 KB Close viewer /islandora/object/uuid:a56932c8-5e76-4fb0-b72f-29cd7b99bc86/datastream/OBJ/view