Print Email Facebook Twitter SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening Title SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening Author Zhang, J.J. Stoffel, M. Rastelli, A. Schmidt, O.G. Jovanovi?, V. Nanver, L.K. Bauer, G. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics & Computer Engineering Date 2007-10-24 Abstract The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes. Subject Ge-Si alloysisland structuresemiconductor growthsemiconductor materialssemiconductor quantum dotssurface morphology To reference this document use: http://resolver.tudelft.nl/uuid:a84c564c-772e-4e89-9c88-cd63ebfd11d9 DOI https://doi.org/10.1063/1.2802555 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v91/i17/p173115/s1 Source Applied Physics Letters, 91 (17), 2007 Part of collection Institutional Repository Document type journal article Rights (c) 2007 The Author(s); American Institute of Physics Files PDF Jovanovic_2007.pdf 252.63 KB Close viewer /islandora/object/uuid:a84c564c-772e-4e89-9c88-cd63ebfd11d9/datastream/OBJ/view