Issues with transferring PureB CVD from an epitaxial reactor to a furnace system

Title

Issues with transferring PureB CVD from an epitaxial reactor to a furnace system

 Author

Mok, K.R.C.
Nanver, L.K.
De Boer, W.D.
Vlooswijk, A.H.G.

Faculty

Electrical Engineering, Mathematics and Computer Science

 Department

Microelectronics

 Date

2011-11-14

 Abstract

In order to transfer the CVD process from a singlewafer epitaxial reactor to a batch furnace system, several issues have to be considered. The main process issue is that PureB deposition is highly-selective, depositing only on silicon and not silicon dioxide. Silicon surface has to be free of native oxide and oxidation must be prevented during wafer loading. In addition, the use of hydrogen as a carrier gas, under atmospheric pressure in the current epitaxial reactor CVD process, is a significant safety consideration for use in a batch furnace

 Subject

pureB, ultrashallow junction

 To reference this document use:

http://resolver.tudelft.nl/uuid:a99550fe-6785-4db2-93d2-2b85ae1ab8ea

 Publisher

Technology Foundation STW

 Source

Proceedings ICT.OPEN: Micro technology and micro devices (SAFE 2011), Veldhoven, Nov. 14-15, 2011, 1-3

 Part of collection

Institutional Repository

 Document type

conference paper

 Rights

(c) 2011 Mok, K.R.C., Nanver, L.K., De Boer, W.D., Vlooswijk, A.H.G.
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