Print Email Facebook Twitter Low-temperature formation of silicon and silicon oxide structures Title Low-temperature formation of silicon and silicon oxide structures Author Ishihara, R. Trifunovic, M. Van der Zwan, M. Faculty Electrical Engineering, Mathematics and Computer Science Department Quantum Engineering Date 2016-02-04 Abstract A method for low-temperature formation of a silicon/silicon-oxide structure on a substrate is described wherein the method comprises: forming a first (poly)silane layer over at least part of a substrate; transforming said first (poly)silane layer directly into a (crystalline) silicon layer by exposing said first (poly)silane layer to UV radiation comprising one or more wavelengths within the range between 100 and 450 nm; forming a second (poly)silane layer over at least part of said substrate; and, transforming said second (poly)silane layer directly into a silicon oxide layer by exposing said second (poly)silane layer to oxygen and/or ozone and to UV light comprising one or more wavelengths within the range between 100 and 450 nm. To reference this document use: http://resolver.tudelft.nl/uuid:addafb10-36c0-4594-b960-641c33e5127b Publisher European Patent Office Source http://worldwide.espacenet.com/publicationDetails/biblio?DB=EPODOC&II=8&ND=3&adjacent=true&locale=en_EP&FT=D&date=20160204&CC=WO&NR=2016018144A1&KC=A1 Source WO 2016018144 (A1) Part of collection Institutional Repository Document type patent Rights (c) 2016 The Author(s) Files PDF WO2016018144A1.pdf 3.29 MB Close viewer /islandora/object/uuid:addafb10-36c0-4594-b960-641c33e5127b/datastream/OBJ/view