Print Email Facebook Twitter Effect of Quantum Hall Edge Strips on Valley Splitting in Silicon Quantum Wells Title Effect of Quantum Hall Edge Strips on Valley Splitting in Silicon Quantum Wells Author Paquelet Wuetz, B. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Losert, Merritt P. (University of Wisconsin-Madison) Tosato, A. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Lodari, M. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Bavdaz, P.L. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Stehouwer, Lucas (Kavli institute of nanoscience Delft; Student TU Delft) Sammak, A. (TU Delft Business Development; TNO) Veldhorst, M. (TU Delft QCD/Veldhorst Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Scappucci, G. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Department Business Development Date 2020 Abstract We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field B and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with B and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density eB/h across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 μeV/1011 cm-2, which is consistent with theoretical predictions for near-perfect quantum well top interfaces. To reference this document use: http://resolver.tudelft.nl/uuid:adfe5719-99a6-4762-97e5-42241608bf0c DOI https://doi.org/10.1103/PhysRevLett.125.186801 ISSN 0031-9007 Source Physical Review Letters, 125 (18) Part of collection Institutional Repository Document type journal article Rights © 2020 B. Paquelet Wuetz, Merritt P. Losert, A. Tosato, M. Lodari, P.L. Bavdaz, Lucas Stehouwer, A. Sammak, M. Veldhorst, G. Scappucci, More Authors Files PDF PhysRevLett.125.186801.pdf 491.46 KB Close viewer /islandora/object/uuid:adfe5719-99a6-4762-97e5-42241608bf0c/datastream/OBJ/view