Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

Sokolovskij, R. (State Key Laboratory of Solid State Lighting)
Iervolino, E. (Southern University of Science and Technology)
Zhao, Changhui (Southern University of Science and Technology)
Wang, F. (Southern University of Science and Technology)
Yu, Hongyu (Southern University of Science and Technology)
Santagata, F. (TU Delft Electronic Components, Technology and Materials)
Sarro, Pasqualina M (TU Delft Electronic Components, Technology and Materials)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)

2017

This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios W_g/L_g from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient response are directly related to the sensor gate electrode W_g/L_g ratio. The obtained results demonstrated a 217 % increase in sensitivity and 4630 % increase in sensing current variation at 500 ppm H2 for a W_g/L_g from 0.25 to 10. In addition, the detection limit was lowered to 5 ppm. Transient characteristics demonstrated faster sensor response to H2, but slower recovery rates with increasing ratio.

AlGaN
GaN
H2 sensor
HEMT
high temperature
sensor layout

http://resolver.tudelft.nl/uuid:b2fd8457-c1e8-4807-8a37-cecb72173273

https://doi.org/10.1109/ICSENS.2017.8234419

IEEE, Piscataway, NJ

978-1-5090-1013-4

Proceedings of IEEE Sensors Conference 2017

IEEE SENSORS 2017, 2017-10-29 → 2017-11-01, Glasgow, United Kingdom

Accepted author manuscript

Institutional Repository

conference paper

© 2017 R. Sokolovskij, E. Iervolino, Changhui Zhao, F. Wang, Hongyu Yu, F. Santagata, Pasqualina M Sarro, Kouchi Zhang