Print Email Facebook Twitter I-V characteristics of in-plane and out-of-plane strained edge-hydrogenated armchair graphene nanoribbons Title I-V characteristics of in-plane and out-of-plane strained edge-hydrogenated armchair graphene nanoribbons Author Cartamil-Bueno, S.J. Rodriguez-Bolivar, S. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2015-06-30 Abstract The effects of tensile strain on the current-voltage (I-V) characteristics of hydrogenated-edge armchair graphene nanoribbons are investigated by using DFT theory. The strain is introduced in two different ways related to the two types of systems studied in this work: in-plane strained systems (A) and out-of-plane strained systems due to bending (B). These two kinds of strain lead to make a distinction among three cases: in-plane strained systems with strained electrodes (A1) and with unstrained electrodes (A2), and out-of-plane homogeneously strained systems with unstrained, fixed electrodes (B). The systematic simulations to calculate the electronic transmission between two electrodes were focused on systems of 8 and 11 dimers in width. The results show that the differences between cases A2 and B are negligible, even though the strain mechanisms are different: in the plane case, the strain is uniaxial along its length; while in the bent case, the strain is caused by the arc deformation. Based on the study, a new type of nanoelectromechanical system solid state switching device is proposed. Subject electrodesband gapgraphenenanomaterialselectrical properties To reference this document use: http://resolver.tudelft.nl/uuid:b720ade3-fa5c-4d70-abef-cf367045a47e Publisher American Institute of Physics ISSN 0021-8979 Source https://doi.org/10.1063/1.4923225 Source Journal of Applied Physics, 117 (24), 2015 Part of collection Institutional Repository Document type journal article Rights © 2015 AIP Publishing Files PDF Cartamil-Bueno_2015.pdf 1.07 MB Close viewer /islandora/object/uuid:b720ade3-fa5c-4d70-abef-cf367045a47e/datastream/OBJ/view