Electrostatic control of the anomalous Hall effect in SrRuO3

Title

Electrostatic control of the anomalous Hall effect in SrRuO3

 Author

Spring, Hélène (TU Delft Applied Sciences)

Contributor

Caviglia, Andrea (mentor)
Akhmerov, Anton (graduation committee)
van der Sar, Toeno (graduation committee)

Degree granting institution

Delft University of Technology

 Programme

Applied Physics | Quantum Technology

 Date

2019-05-23

 Abstract

In this study, ultrathin films of the itinerant 4d ferromagnet SrRuO3 were epitaxially deposited on SrTiO3 and capped with a thin LaAlO3 layer. Top gates and a dielectric layer were patterned onto contacted films and magnetotransport properties were characterized at low temperatures as a function of top gate voltage. A particular focus was placed on the anomalous Hall resistivity. The magnitude of the Hall signal and the sheet resistance were shown to vary with top gate voltage. In particular, the anomalous Hall loops were compared to numerical tight-binding models. The model is proposed as an alternate explanation to the skyrmion picture and as a complement to the two-channel phenomenological model put forth to explain the unusual low-temperature anomalous signal of ultrathin SrRuO3 . Model predictions were found to be valid at
low temperatures in semiconducting Ru-deficient SrRuO3 films.

 Subject

anomalous Hall effect
complex oxide
top gate
tight-binding model

 To reference this document use:

http://resolver.tudelft.nl/uuid:bb30d5ee-c669-46f5-b3dd-be5c9e429484

 Part of collection

Student theses

 Document type

master thesis

 Rights

© 2019 Hélène Spring
Files
PDF final_corrected.pdf 39.34 MB
Close viewer