Print Email Facebook Twitter In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells Title In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells Author Morisset, Audrey (Swiss Federal Institute of Technology) Famprikis, T. (TU Delft RST/Storage of Electrochemical Energy) Haug, Franz Josef (Swiss Federal Institute of Technology) Ingenito, Andrea (CSEM SA) Ballif, Christophe (Swiss Federal Institute of Technology) Bannenberg, L.J. (TU Delft RID/TS/Instrumenten groep) Date 2022 Abstract The integration of passivating contacts based on a highly doped polycrystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) layer has been identified as the next step to further increase the conversion efficiency of current mainstream crystalline silicon (c-Si) solar cells. However, the interrelation between the final properties of poly-Si/SiOx contacts and their fabrication process has not yet been fully unraveled, which is mostly due to the challenge of characterizing thin-film stacks with features in the nanometric range. Here, we apply in situ X-ray reflectometry and diffraction to investigate the multiscale (1 Å-100 nm) structural evolution of poly-Si contacts during annealing up to 900 °C. This allows us to quantify the densification and thinning of the poly-Si layer during annealing as well as to monitor the disruption of the thin SiOx layer at high temperature >800 °C. Moreover, results obtained on a broader range of thermal profiles, including firing with dwell times of a few seconds, emphasize the impact of high thermal budgets on poly-Si contacts' final properties and thus the importance of ensuring a good control of such high-temperature processes when fabricating c-Si solar cells integrating such passivating contacts. Overall, this study demonstrates the robustness of combining different X-ray elastic scattering techniques (here XRR and GIXRD), which present the unique advantage of being rapid, nondestructive, and applicable on a large sample area, to unravel the multiscale structural evolution of poly-Si contacts in situ during high-temperature processes. Subject annealingc-Si solar cellsin situ monitoringpassivating contactspoly-SiSiOX-ray reflectometry To reference this document use: http://resolver.tudelft.nl/uuid:bc0f439d-f9ed-404c-8aba-e3e8b400d7ca DOI https://doi.org/10.1021/acsami.2c01225 ISSN 1944-8244 Source ACS applied materials & interfaces, 14 (14), 16413-16423 Part of collection Institutional Repository Document type journal article Rights © 2022 Audrey Morisset, T. Famprikis, Franz Josef Haug, Andrea Ingenito, Christophe Ballif, L.J. Bannenberg Files PDF acsami.2c01225.pdf 3.27 MB Close viewer /islandora/object/uuid:bc0f439d-f9ed-404c-8aba-e3e8b400d7ca/datastream/OBJ/view