Print Email Facebook Twitter Frequency References Based on the Thermal Diffusivity of Silicon and Silicon Dioxide Title Frequency References Based on the Thermal Diffusivity of Silicon and Silicon Dioxide Author Goyal, S. Contributor Makinwa, K.A.A. (mentor) Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics & Computer Engineering Date 2012-11-02 Abstract Conventional methods of generating accurate on-chip frequencies are based on electrical components such as resistors, capacitors, and inductors. Recently, a new type of frequency reference based on the thermal diffusivity (TD) of silicon has been introduced. Such TD frequency references rely on the well defined thermal-domain properties of silicon, rather than on the stability of electrical components. This thesis explores various ways of improving the performance of TD frequency references. Subject Frequency Reference To reference this document use: http://resolver.tudelft.nl/uuid:be0bd616-57ab-46d6-b02d-84af9dd6c717 Embargo date 2012-09-24 Part of collection Student theses Document type master thesis Rights (c) 2012 Goyal, S. Files PDF thesis.pdf 3.44 MB Close viewer /islandora/object/uuid:be0bd616-57ab-46d6-b02d-84af9dd6c717/datastream/OBJ/view