Print Email Facebook Twitter Method of forming silicon on a substrate Title Method of forming silicon on a substrate Author Ishihara, R. Trifunovic, M. Van der Zwan, M. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2014-10-30 Abstract A method for forming a silicon layer using a liquid silane compound is described wherein said method comprises the steps of forming a first layer on a substrate, preferably a flexible substrate, said first layer comprising a (poly)silane; and, irradiating said first light ight comprising one or more wavelength within the range between 200 and 400 nm for transforming said polysilane in silicon, preferably amorphous silicon or polysilicon. To reference this document use: http://resolver.tudelft.nl/uuid:bf668e80-a237-4e57-8e13-43e1a26ad081 Publisher European Patent Office Source http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2014175740A1&KC=A1&FT=D&ND=3&date=20141030&DB=EPODOC&locale=en_EP Source WO 2014175740 (A1) Part of collection Institutional Repository Document type patent Rights (c) 2014 The Author(s) Files PDF WO2014175740A1.pdf 4.38 MB Close viewer /islandora/object/uuid:bf668e80-a237-4e57-8e13-43e1a26ad081/datastream/OBJ/view