Print Email Facebook Twitter Single-grain Si TFTs for high-speed flexible electronics Title Single-grain Si TFTs for high-speed flexible electronics Author Ishihara, R. Chen, T. Van der Zwan, M. He, M. Schellevis, H. Beenakker, K. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2011-02-03 Abstract Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct formation of high speed Si circuits fabricated with a plastic compatible temperature. Large Si grains with a diameter of 4 microns were formed on predetermined positions by a pulsed laser crystallization process with a plastic compatible temperature. High performance transistors were fabricated inside a single Si grain. To reference this document use: http://resolver.tudelft.nl/uuid:c2351848-124b-4439-b0c1-e366a208b789 DOI https://doi.org/10.1117/12.876649 Publisher SPIE ISSN 0277-786X Source https://doi.org/10.1117/12.876649 Source Proceedings of SPIE, 2011 vol. 7956 Part of collection Institutional Repository Document type conference paper Rights (c)2011 Ishihara, R., Chen, T., Van der Zwan, M., He, M., Schellevis, H., Beenakker, K. Files PDF 2011-7956.Ishihara.pdf 1.92 MB Close viewer /islandora/object/uuid:c2351848-124b-4439-b0c1-e366a208b789/datastream/OBJ/view