Print Email Facebook Twitter Transmission measurement of the photonic band gap of GaN photonic crystal slabs Title Transmission measurement of the photonic band gap of GaN photonic crystal slabs Author Caro, J. Roeling, E.M. Rong, B. Nguyen, H.M. Van der Drift, E.W.J.M. Rogge, S. Karouta, F. Van der Heijden, R.W. Salemink, H.W.M. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2008-08-08 Abstract A high-contrast-ratio (30 dB) photonic band gap in the near-infrared transmission of hole-type GaN two-dimensional photonic crystals (PhCs) is reported. These crystals are deeply etched in a 650 nm thick GaN layer grown on sapphire. A comparison of the measured spectrum with finite difference time domain simulations gives quantitative agreement for the dielectric band and qualitative agreement for the air band. The particular behavior of the air band arises from the relatively low index contrast between the GaN layer and the sapphire substrate. Our results call for extension of the operation of GaN PhCs to the visible range. Subject etchingfinite difference time-domain analysisgallium compoundsIII-V semiconductorsinfrared spectraphotonic band gapphotonic crystalssemiconductor epitaxial layerswide band gap semiconductors To reference this document use: http://resolver.tudelft.nl/uuid:c26e4d5e-4e7b-4cc5-89d7-be9b29d96829 DOI https://doi.org/10.1063/1.2967744 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v93/i5/p051117/s1 Source Applied Physics Letters, 93 (5), 2008 Part of collection Institutional Repository Document type journal article Rights (c) 2008 The Author(s); American Institute of Physics Files PDF Caro_2008.pdf 476.71 KB Close viewer /islandora/object/uuid:c26e4d5e-4e7b-4cc5-89d7-be9b29d96829/datastream/OBJ/view