Print Email Facebook Twitter Relaxation of the resistive superconducting state in boron-doped diamond films Title Relaxation of the resistive superconducting state in boron-doped diamond films Author Kardakova, A. Shishkin, A. Semenov, A. Goltsman, G.N. Ryabchun, S. Klapwijk, T.M. Bousquet, J. Eon, D. Sacépé, B. Klein, T. Bustarret, E. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2016-02-08 Abstract We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm?3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T?2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. To reference this document use: http://resolver.tudelft.nl/uuid:c8dee8c8-a39d-4653-adc3-a2bfdb3e2cf4 Publisher American Physical Society ISSN 1098-0121 Source https://doi.org/10.1103/PhysRevB.93.064506 Source Physical Review B, 93 (6), 2016 Part of collection Institutional Repository Document type journal article Rights © 2016 American Physical Society Files PDF 329147.pdf 432.27 KB Close viewer /islandora/object/uuid:c8dee8c8-a39d-4653-adc3-a2bfdb3e2cf4/datastream/OBJ/view