Print Email Facebook Twitter Vertical SiC taper with a small angle fabricated by slope transfer method Title Vertical SiC taper with a small angle fabricated by slope transfer method Author Xin, Yu (State Key Laboratory of NBC Protection for Civilian, Beijing) Pandraud, G. (TU Delft EKL Processing) French, P.J. (TU Delft Electronic Instrumentation) Date 2019 Abstract In this Letter, a slope transfer method to fabricate vertical waveguide couplers is proposed. This method utilises wet etched Si as a mask, and takes advantage of dry etching selectivity between Si and SiC, to successfully transfer the profile from the Si master into SiC. By adopting this method, a <2° slope is achieved. Such a taper can bring the coupling efficiency in SiC waveguides to 80% (around 1 dB loss) or better from around 10% (10 dB loss) without taper. It further increases the alignment tolerance at the same time, which ensures the successful development of a plug-and-play solution for optical sensing. This is the first reported taper made in SiC. Subject silicon compoundsoptical waveguidessetchingoptical fabricationroptical couplerssiliconelemental semiconductorsintegrated opticswide band gap semiconductors To reference this document use: http://resolver.tudelft.nl/uuid:cb21ae40-d799-4653-8711-c9c6d1db77c0 DOI https://doi.org/10.1049/el.2019.0232 ISSN 0013-5194 Source Electronics Letters, 55 (11), 661-663 Part of collection Institutional Repository Document type journal article Rights © 2019 Yu Xin, G. Pandraud, P.J. French Files PDF EL.2019.0232.pdf 643.32 KB Close viewer /islandora/object/uuid:cb21ae40-d799-4653-8711-c9c6d1db77c0/datastream/OBJ/view