Print Email Facebook Twitter Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy Title Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy Author Buchs, G. Barkelid, K.M. Bagiante, S. Steele, G.A. Zwiller, V. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2011-10-05 Abstract We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed microscopic study of the evolution of the band profiles as a function of the gates voltage. Here we study the emergence of a p-n and a n-p junctions out of a n-type transistor channel using two local gates. In both cases the I - V curves recorded for gate configurations corresponding to the formation of the p-n or n-p junction in the SPCM measurements reveal a clear transition from resistive to rectification regimes. The rectification curves can be fitted well to the Shockley diode model with a series resistor and reveal a clear ideal diode behavior. Subject carbon nanotubeselemental semiconductorsinsulated gate field effect transistorsp-n junction To reference this document use: http://resolver.tudelft.nl/uuid:ce959df1-51cc-44bb-b193-879fa5f3b83f DOI https://doi.org/10.1063/1.3645022 Publisher American Institute of Physics ISSN 0021-8979 Source http://link.aip.org/link/doi/10.1063/1.3645022 Source Journal of Applied Physics, 110 (7), 2011 Part of collection Institutional Repository Document type journal article Rights (c) 2011 The Author(s)American Institute of Physics Files PDF JApplPhys_110_0743081.pdf 1.37 MB Close viewer /islandora/object/uuid:ce959df1-51cc-44bb-b193-879fa5f3b83f/datastream/OBJ/view