Print Email Facebook Twitter A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology Title A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology Author Mandai, S. Fishburn, M.W. Maruyama, Y. Charbon, E. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2012-02-27 Abstract We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at most 5 kHz, which is 30 Hz/?m2, at an excess bias of 4V when we measure 10 ?m diameter active area structure. Afterpulsing probability, timing jitter, and temperature effects on DCR are also presented. Subject detectorsavalanche photodiodes (APDs)siliconOA-Fund TU Delft To reference this document use: http://resolver.tudelft.nl/uuid:d1e792ee-9761-488e-a4c1-c6f0e637c640 DOI https://doi.org/10.1364/OE.20.005849 Publisher Optical Society of America ISSN 1094-4087 Source http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-6-5849 Source Optics Express, 20 (6), 2012 Part of collection Institutional Repository Document type journal article Rights © 2012 Optical Society of America Files PDF Mandai.pdf 1.1 MB Close viewer /islandora/object/uuid:d1e792ee-9761-488e-a4c1-c6f0e637c640/datastream/OBJ/view