Print Email Facebook Twitter Spin-torque transistor Title Spin-torque transistor Author Bauer, G.E.W. Brataas, A. Tserkovnyak, Y. Van Wees, B.J. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2003-06-02 Abstract A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure–drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required. Subject spin valvesmagnetoelectronicsthin film transistorsmagnetic thin film devices To reference this document use: http://resolver.tudelft.nl/uuid:d333fccb-cc29-412f-9049-43db6a0f25e6 DOI https://doi.org/10.1063/1.1579122 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v82/i22/p3928/s1 Source Applied Physics Letters, 82 (22), 2003 Part of collection Institutional Repository Document type journal article Rights (c) 2003 The Author(s); American Institute of Physics Files PDF Bauer_2003.pdf 75.27 KB Close viewer /islandora/object/uuid:d333fccb-cc29-412f-9049-43db6a0f25e6/datastream/OBJ/view