A Sub-1V, Micropower Bandgap Reference

A Sub-1V, Micropower Bandgap Reference

Panchanan, G.

Makinwa, K.A.A. (mentor)
Chae, Y.C. (mentor)

Electrical Engineering, Mathematics and Computer Science

Electrical Engineering (Microelectronics)

Electronic Instrumentation

2012-09-26

Bandgap references are used in many ICs to produce ‘stable’ and ‘temperature-independent’ voltage. This thesis describes a sub-1V bandgap reference in 40 nm and 0.16 µm CMOS technologies that is functional from -40 oC to 125 oC. Traditionally, BJT based references are commonly used, but produce an output voltage of 1.2 V and are not suitable for supply voltages below 1 V. Previously area-intensive solutions that were based on resistive sub-divisions were used to realize sub-1V references. In this work, a compact and low power ‘bandgap’ reference was implemented in standard CMOS technology using a device known as a Dynamic Threshold MOSFET (DTMOST). 20 chips have been taped out in NXP 0.16 µm CMOS technology (C14) and packaged in Ceramic DIL packages. A 3 ? spread of 1.25 % is observed. The chips work down to a supply of 0.9 V and occupy 0.05 mm2. Also, a prototype has been designed in a 40 nm CMOS process and post-layout simulations have been performed. The chip works down to a supply of 0.8 V and occupies 0.05 mm2. Simulated 3? spread is 3.7 %. The total current consumption for the chips in both technologies is less than 4 µA in the worst case corners.

bandgap reference
DTMOST
sub-1V
CMOS
40 nm
0.16 um

http://resolver.tudelft.nl/uuid:d63d85d5-96a8-4ee4-b51c-c3a72c145bc6

Student theses

master thesis

(c) 2012 Panchanan, G.