Print Email Facebook Twitter Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon Title Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon Author Kluba, M.M. (TU Delft Electronic Components, Technology and Materials) Arslan, A. (Philips Healthcare) Stoute, R. (TNO) Muganda, James (Eindhoven University of Technology) Dekker, R. (TU Delft Electronic Components, Technology and Materials) Date 2017 Abstract This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be etched in a silicon substrate through a mesh mask. In the same single etching step, multidimensional microchannels with various dimensions (width, length, and depth) can be obtained by tuning the process and design parameters. These fully embedded structures enable further wafer processing and integration of electronic components like sensors and actuators in wafers with microchannels. Subject embedded microchannelHARmesh masksingle-step DRIE (Bosch process) To reference this document use: http://resolver.tudelft.nl/uuid:d6f830b1-d10a-44e7-904a-8c72519d1226 DOI https://doi.org/10.3390/proceedings1040291 Source Proceedings of Eurosensors 2017 Event Eurosensors 2017, 2017-09-03 → 2017-09-06, Paris, France Series Proceedings, 2504-3900, 1 (4) Part of collection Institutional Repository Document type conference paper Rights © 2017 M.M. Kluba, A. Arslan, R. Stoute, James Muganda, R. Dekker Files PDF proceedings_01_00291_v2.pdf 1.08 MB Close viewer /islandora/object/uuid:d6f830b1-d10a-44e7-904a-8c72519d1226/datastream/OBJ/view