Print Email Facebook Twitter Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure Title Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure Author Seshan, V. Ullien, D. Castellanos-Gomez, A. Sachdeva, S. Murthy, D.H.K. Savenije, T.J. Ahmad, H.A. Nunney, T.S. Janssens, S.D. Haenen, K. Nesládek, M. Van der Zant, H.S.J. Sudhölter, E.J.R. De Smet, L.C.P.M. Faculty Applied Sciences Date 2013-06-21 Abstract A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at ?850?°C. The films were extensively evaluated by surface wettability, electron affinity, elemental composition, photoconductivity, and redox studies. In addition, electrografting experiments were performed. The surface characteristics as well as the optoelectronic and redox properties of the annealed films were found to be very similar to hydrogen plasma-treated films. Moreover, the presented method is compatible with atmospheric pressure and provides a low-cost solution to hydrogenate CVD diamond, which makes it interesting for industrial applications. The plausible mechanism for the hydrogen termination of CVD diamond films is based on the formation of surface carbon dangling bonds and carbon-carbon unsaturated bonds at the applied tempera-ture, which react with molecular hydrogen to produce a hydrogen-terminated surface. Subject annealingatmospheric pressureCVD coatingsdangling bondsdiamondelemental semiconductorshigh-temperature effectshydrogenationoxidationphotoconductivityplasma materials processingreduction (chemical)semiconductor growthsemiconductor thin filmswetting To reference this document use: http://resolver.tudelft.nl/uuid:de5fa1a7-3fb3-4797-ac0e-ad822780ab87 DOI https://doi.org/10.1063/1.4810866 Publisher American Institute of Physics ISSN 0021-9606 Source https://doi.org/10.1063/1.4810866 Source Journal of Chemical Physics, 138 (23), 2013 Part of collection Institutional Repository Document type journal article Rights © 2013 AIP Publishing LLC Files PDF Seshan_2013.pdf 644.34 KB Close viewer /islandora/object/uuid:de5fa1a7-3fb3-4797-ac0e-ad822780ab87/datastream/OBJ/view