Print Email Facebook Twitter Strain-Dependent Edge Structures in MoS2 Layers Title Strain-Dependent Edge Structures in MoS2 Layers Author Tinoco Rivas, M. (TU Delft QN/Conesa-Boj Lab; Kavli institute of nanoscience Delft) Maduro, L.A. (TU Delft QN/Conesa-Boj Lab; Kavli institute of nanoscience Delft) Masaki, Mukai (JEOL Ltd., Japan) Okunishi, Eiji (JEOL Ltd., Japan) Conesa Boj, S. (TU Delft QN/Conesa-Boj Lab; Kavli institute of nanoscience Delft) Date 2017-11-08 Abstract Edge structures are low-dimensional defects unavoidable in layered materials of the transition metal dichalcogenides (TMD) family. Among the various types of such structures, the armchair (AC) and zigzag (ZZ) edge types are the most common. It has been predicted that the presence of intrinsic strain localized along these edges structures can have direct implications for the customization of their electronic properties. However, pinning down the relation between local structure and electronic properties at these edges is challenging. Here, we quantify the local strain field that arises at the edges of MoS2 flakes by combining aberration-corrected transmission electron microscopy (TEM) with the geometrical-phase analysis (GPA) method. We also provide further insight on the possible effects of such edge strain on the resulting electronic behavior by means of electron energy loss spectroscopy (EELS) measurements. Our results reveal that the two-dominant edge structures, ZZ and AC, induce the formation of different amounts of localized strain fields. We also show that by varying the free edge curvature from concave to convex, compressive strain turns into tensile strain. These results pave the way toward the customization of edge structures in MoS2, which can be used to engineer the properties of layered materials and thus contribute to the optimization of the next generation of atomic-scale electronic devices built upon them. Subject aberration-corrected transmission electron microscopyedge structureselectron energy loss spectroscopystrainTransition-metal dichalcogenides To reference this document use: http://resolver.tudelft.nl/uuid:e4e1c530-252d-44d2-9df3-66e2ce5e52cc DOI https://doi.org/10.1021/acs.nanolett.7b03627 ISSN 1530-6984 Source Nano Letters: a journal dedicated to nanoscience and nanotechnology, 17 (11), 7021-7026 Part of collection Institutional Repository Document type journal article Rights © 2017 M. Tinoco Rivas, L.A. Maduro, Mukai Masaki, Eiji Okunishi, S. Conesa Boj Files PDF acs.nanolett.7b03627.pdf 4.85 MB Close viewer /islandora/object/uuid:e4e1c530-252d-44d2-9df3-66e2ce5e52cc/datastream/OBJ/view