Print Email Facebook Twitter Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology Title Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology Author Lee, M.J. Sun, P. Charbon, E. Faculty Electrical Engineering, Mathematics and Computer Science Department Quantum Engineering Date 2015-06-08 Abstract We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions, etc. In this paper, characterization results of the most promising SOI CMOS SPAD are compared with state-of-the-art results reported in the literature. Subject avalanche photodiode (APD)backside illumination (BSI)CMOSsiliconsilicon on insulator (SOI)single-photon avalanche diode (SPAD)standard SOI CMOS technology To reference this document use: http://resolver.tudelft.nl/uuid:e9ed40ce-d223-48e2-89da-2daa38c6af16 Source IISW 2015: International Image Sensor Workshop, Vaals, The Netherlands, 8-11 June 2015 Part of collection Institutional Repository Document type conference paper Rights (c) 2015 The Author(s) Files PDF 329467.pdf 234.08 KB Close viewer /islandora/object/uuid:e9ed40ce-d223-48e2-89da-2daa38c6af16/datastream/OBJ/view