Print Email Facebook Twitter Characterizing size-dependent effective elastic modulus of silicon nanocantilevers using electrostatic pull-in instability Title Characterizing size-dependent effective elastic modulus of silicon nanocantilevers using electrostatic pull-in instability Author Sadeghian, H. Yang, C.K. Goosen, J.F.L. Van der Drift, E. Bossche, A. French, P.J. Van Keulen, F. Faculty Mechanical, Maritime and Materials Engineering Department Precision and Microsystems Engineering Date 2009-06-02 Abstract This letter presents the application of electrostatic pull-in instability to study the size-dependent effective Young’s Modulus ? ( ~170–70?GPa) of [110] silicon nanocantilevers (thickness ~1019–40?nm). The presented approach shows substantial advantages over the previous methods used for characterization of nanoelectromechanical systems behaviors. The ? is retrieved from the pull-in voltage of the structure via the electromechanical coupled equation, with a typical error of ? 12%, much less than previous work in the field. Measurement results show a strong size-dependence of ?. The approach is simple and reproducible for various dimensions and can be extended to the characterization of nanobeams and nanowires. Subject elemental semiconductorsnanostructured materialssiliconYoung's modulus To reference this document use: http://resolver.tudelft.nl/uuid:eb977a84-09ca-4265-ad5a-39c2fa507e43 DOI https://doi.org/10.1063/1.3148774 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v94/i22/p221903/s1 Source Applied Physics Letters, 94 (22), 2009 Part of collection Institutional Repository Document type journal article Rights (c) 2009 The Author(s); American Institute of Physics Files PDF Sadeghian2_2009.pdf 279.23 KB Close viewer /islandora/object/uuid:eb977a84-09ca-4265-ad5a-39c2fa507e43/datastream/OBJ/view