Print Email Facebook Twitter Electrically driven spin qubit based on valley mixing Title Electrically driven spin qubit based on valley mixing Author Huang, Wister (University of New South Wales) Veldhorst, M. (TU Delft QCD/Veldhorst Lab; University of New South Wales) Zimmerman, Neil M. (National Institute of Standards and Technology) Dzurak, Andrew S. (University of New South Wales) Culcer, Dimitrie (University of New South Wales) Date 2017 Abstract The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon. To reference this document use: http://resolver.tudelft.nl/uuid:ebe3f527-90b3-456f-b380-f8f2a01b519a DOI https://doi.org/10.1103/PhysRevB.95.075403 ISSN 1098-0121 Source Physical Review B (Condensed Matter and Materials Physics), 95 (7) Part of collection Institutional Repository Document type journal article Rights © 2017 Wister Huang, M. Veldhorst, Neil M. Zimmerman, Andrew S. Dzurak, Dimitrie Culcer Files PDF PhysRevB.95.075403.pdf 1007.92 KB Close viewer /islandora/object/uuid:ebe3f527-90b3-456f-b380-f8f2a01b519a/datastream/OBJ/view