Print Email Facebook Twitter Model for nanopillar growth by focused helium ion-beam-induced deposition Title Model for nanopillar growth by focused helium ion-beam-induced deposition Author Alkemade, P.F.A. Chen, P. Van Veldhoven, E. Maas, D. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2010-12-01 Abstract An analytical model for the growth of nanopillars by helium ion-beam-induced deposition is presented and compared to experimental data. This model describes the competition between pillar growth in vertical and lateral directions. It assumes that vertical growth is induced by incident primary ions and type-1 secondary electrons, whereas lateral growth is induced by scattered ions and type-2 secondary ions. An essential element of the model is the notion that depletion of adsorbed precursor molecules occurs only at the pillars’ apex. Depletion impedes vertical growth at the apex, allowing more time for lateral outgrowth of the pillar’s sidewalls. The model describes qualitatively the trends in measured vertical, lateral, and volumetric growth rates of PtC pillars as functions of the ion-beam current. It can be used to design growth experiments and Monte Carlo simulations. Subject ion beam assisted depositionMonte Carlo methodsnanofabrication,nanostructured materialsplatinum compoundsPtC(CH3)3Pt(CPCH3)He To reference this document use: http://resolver.tudelft.nl/uuid:f81b4384-c151-4299-a0f0-9dc1f48e863d Publisher American Vacuum Society ISSN 1071-1023 Source https://doi.org/10.1116/1.3517536 Source Journal of Vacuum Science & Technology B, 28 (6), 2010 Part of collection Institutional Repository Document type journal article Rights © 2010 American Vacuum Society Files PDF Alkemade_2010.pdf 223.95 KB Close viewer /islandora/object/uuid:f81b4384-c151-4299-a0f0-9dc1f48e863d/datastream/OBJ/view