Print Email Facebook Twitter Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection Title Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection Author Zhang, Jian (Fudan University; Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Sokolovskij, R. (TU Delft Electronic Components, Technology and Materials; Southern University of Science and Technology; State Key Laboratory of Solid State Lighting) Chen, Ganhui (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Zhu, Yumeng (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Qi, Yongle (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Lin, Xinpeng (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Li, Wenmao (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Zhang, G. (TU Delft Signal Processing Systems) Jiang, Yu-Long (Fudan University) Yu, Hongyu (Southern University of Science and Technology; Shenzhen Key Laboratory of the Third Generation Semi-conductor) Date 2019 Abstract In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation. Subject AlGaN/GaNGas sensorH2SHEMTPt To reference this document use: http://resolver.tudelft.nl/uuid:f8a03813-2579-455d-87f0-7b4ae73ed7fe DOI https://doi.org/10.1016/j.snb.2018.10.052 Embargo date 2020-10-16 ISSN 0925-4005 Source Sensors and Actuators B: Chemical: international journal devoted to research and development of physical and chemical transducers, 280, 138-143 Bibliographical note Accepted author manuscript Part of collection Institutional Repository Document type journal article Rights © 2019 Jian Zhang, R. Sokolovskij, Ganhui Chen, Yumeng Zhu, Yongle Qi, Xinpeng Lin, Wenmao Li, G. Zhang, Yu-Long Jiang, Hongyu Yu Files PDF 47248585_zhang2019.pdf 860.28 KB Close viewer /islandora/object/uuid:f8a03813-2579-455d-87f0-7b4ae73ed7fe/datastream/OBJ/view