Print Email Facebook Twitter Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate Title Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate Author Gao, J.R. Hajenius, M. Tichelaar, F.D. Klapwijk, T.M. Voronov, B. Grishin, E. Gol'tsman, G. Zorman, C.A. Mehregany, M. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2007-08-06 Abstract The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800?°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4?to?4.1?nm shows a superconducting transition temperature of 11.8?K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM. Subject nanostructured materialsniobium compoundssputter depositionsuperconducting epitaxial layerssuperconducting thin filmssuperconducting transition temperaturetransmission electron microscopy To reference this document use: http://resolver.tudelft.nl/uuid:fc4c634c-6b8c-4707-b57e-84b8432ec89d DOI https://doi.org/10.1063/1.2766963 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v91/i6/p062504/s1 Source Applied Physics Letters, 91 (6), 2007 Part of collection Institutional Repository Document type journal article Rights (c) 2007 The Author(s); American Institute of Physics Files PDF Gao_2007.pdf 453.48 KB Close viewer /islandora/object/uuid:fc4c634c-6b8c-4707-b57e-84b8432ec89d/datastream/OBJ/view