Three-Dimensional Atomic-Scale Tomography of Buried Semiconductor Heterointerfaces

Three-Dimensional Atomic-Scale Tomography of Buried Semiconductor Heterointerfaces

Koelling, Sebastian (Polytechnique Montreal)
Stehouwer, L.E.A. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)
Paquelet Wuetz, B. (TU Delft BUS/Quantum Delft; TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)
Scappucci, G. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)
Moutanabbir, Oussama (Polytechnique Montreal)

2022

Atom probes generate three-dimensional atomic-scale tomographies of material volumes corresponding to the size of modern-day solid-state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electronic and quantum devices. Employing brute-force search, the current dominant reconstruction protocol to generate tomographic three-dimensional images from Atom Probe data is advanced to its limits. Using Si/SiGe heterostructure for qubits as a model system, the authors show that it is possible to extract interface properties like roughness and width that agree with transmission electron microscopy observations on the sub-nanometer scale in an automated and highly reproducible manner. The demonstrated approach is a versatile method for atomic-scale characterization of buried interfaces in semiconductor heterostructures.

atom probe tomography
atomic scale microscopy
epitaxial interfaces
semiconductor heterostructures

http://resolver.tudelft.nl/uuid:fcd822ea-affc-4db7-af51-f6c0ae204de9

https://doi.org/10.1002/admi.202201189

Advanced Materials Interfaces, 10 (3)

Institutional Repository

journal article

© 2022 Sebastian Koelling, L.E.A. Stehouwer, B. Paquelet Wuetz, G. Scappucci, Oussama Moutanabbir