Print Email Facebook Twitter Electron-beam-induced deformations of SiO2 nanostructures Title Electron-beam-induced deformations of SiO2 nanostructures Author Storm, A.J. Chen, J.H. Ling, X.S. Zandbergen, H.W. Dekker, C. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2005-07-06 Abstract The imaging beam of a transmission electron microscope can be used to fine tune critical dimensions in silicon oxide nanostructures. This technique is particularly useful for the fabrication of nanopores with single-nanometer precision, down to 2 nm. We report a detailed study on the effect of electron-beam irradiation on apertures with various geometries. We show that, on the same wafer, pores that are smaller than a certain critical size shrink and that larger ones expand. Our results are in agreement with the hypothesis that surface-tension effects drive the modifications. Additionally, we have determined the chemical composition in the pore region before and after modifications and found no significant changes. This result proves that contamination growth is not the underlying mechanism of pore closure. Subject silicon compoundselectron beam effectsdeformationtransmission electron microscopysurface tensionchemical analysisnanoporous materialsnanotechnology To reference this document use: http://resolver.tudelft.nl/uuid:ff610e7b-cbc5-4a78-a53a-d241744e463c DOI https://doi.org/10.1063/1.1947391 Publisher American Institute of Physics ISSN 0021-8979 Source http://link.aip.org/link/JAPIAU/v98/i1/p014307/s1 Source Journal of Applied Physics, 98 (1), 2005 Part of collection Institutional Repository Document type journal article Rights (c) 2005 The Author(s); American Institute of Physics Files PDF Storm_2005.pdf 861.72 KB Close viewer /islandora/object/uuid:ff610e7b-cbc5-4a78-a53a-d241744e463c/datastream/OBJ/view