Low-Power CMOS Smart Temperature Sensor With a Batch-Calibrated Inaccuracy of ±0.25 °C (±3σ) from −70 °C to 130 °C

Low-Power CMOS Smart Temperature Sensor With a Batch-Calibrated Inaccuracy of ±0.25 °C (±3σ) from −70 °C to 130 °C

Aita, AL (TU Delft Electronic Instrumentation)
Pertijs, M.A.P. (TU Delft Electronic Instrumentation)
Makinwa, K.A.A. (TU Delft Electronic Instrumentation)
Huijsing, J.H. (TU Delft Electronic Instrumentation)
Meijer, G.C.M. (TU Delft Electronic Instrumentation)

2013

In this paper, a low-power CMOS smart temperature sensor is presented. The temperature information extracted using substrate PNP transistors is digitized with a resolution of 0.03 °C using a precision switched-capacitor (SC) incremental
A/D converter. After batch calibration, an inaccuracy of ±0.25 °C (±3σ ) from −70 °C to 130 °C is obtained. This represents a two-fold improvement compared to the state-ofthe-art. After individual calibration at room temperature, an
inaccuracy better than ±0.1 °C over the military temperature range is obtained, which is in-line with the state-of-the-art. This performance is achieved at a power consumption of 65 μW during a measurement time of 100 ms, by optimizing the power/inaccuracy tradeoffs, and by employing a clock frequency
proportional to absolute temperature. The latter ensures accurate settling of the SC input stage at low temperatures, and reduces the effects of leakage currents at high temperatures.

$\Delta\Sigma$A/D conversion
batch calibration
smart temperature sensors
substrate PNP transistors

http://resolver.tudelft.nl/uuid:0e046089-e2bb-4d07-a11e-387f8661ebb9

https://doi.org/10.1109/JSEN.2013.2244033

1530-437X

IEEE Sensors Journal, 13 (5), 1840-1848

Institutional Repository

journal article

© 2013 AL Aita, M.A.P. Pertijs, K.A.A. Makinwa, J.H. Huijsing, G.C.M. Meijer