Print Email Facebook Twitter Field-effect transistors on tetracene single crystals Title Field-effect transistors on tetracene single crystals Author De Boer, R.W.I. Klapwijk, T.M. Morpurgo, A.F. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2003-11-24 Abstract We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4?cm2/V?s. The nonmonotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope, confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality. Subject insulated gate field effect transistorsmolecular electronicscarrier mobilityorganic semiconductors To reference this document use: http://resolver.tudelft.nl/uuid:1093e190-b166-42ab-89fb-cc8536c4b460 DOI https://doi.org/10.1063/1.1629144 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v83/i21/p4345/s1 Source Applied Physics Letters, 83 (21), 2003 Part of collection Institutional Repository Document type journal article Rights (c) 2003 The Author(s); American Institute of Physics Files PDF deBoer_2003.pdf 152.17 KB Close viewer /islandora/object/uuid:1093e190-b166-42ab-89fb-cc8536c4b460/datastream/OBJ/view