Print Email Facebook Twitter An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane Title An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane Author Mohammadi, V. De Boer, W.B. Nanver, L.K. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2012-12-03 Abstract In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions by applying the actual parabolic gas velocity and temperature gradient profiles in the reactor. These are calculated theoretically and also simulated with fluent software. The influence of an axial and lateral diffusion of diborane species and the validity of the model for laminar flow in experimental CVD processes are also treated. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface H-coverage, and reactor dimensions. By only adjusting these reactor/process parameters, the model was successfully transferred from the ASM Epsilon One to the Epsilon 2000 reactor which has totally different reactor conditions. The model's predictive capabilities have been verified by experiments performed at 700?°C in these two different ASM CVD reactors. Subject boronboundary layerschemical vapour depositiondiffusionlaminar flowsurface chemistry To reference this document use: http://resolver.tudelft.nl/uuid:1147b2a7-e176-4b21-9d0e-ec6cbccf27d8 DOI https://doi.org/10.1063/1.4767328 Publisher American Institute of Physics ISSN 0021-8979 Source https://doi.org/10.1063/1.4767328 Source Journal of Applied Physics, 112 (11), 2012 Part of collection Institutional Repository Document type journal article Rights © 2012 American Institute of Physics Files PDF Mohammadi_2012.pdf 1.36 MB Close viewer /islandora/object/uuid:1147b2a7-e176-4b21-9d0e-ec6cbccf27d8/datastream/OBJ/view