Print Email Facebook Twitter Scaling and Modelling Photoluminescence of Si Nanoparticles Embedded in Silicon Oxide Title Scaling and Modelling Photoluminescence of Si Nanoparticles Embedded in Silicon Oxide Author Quik, J. Contributor Van Swaaij, R.A.C.M.M. (mentor) Van Sebille, M. (mentor) Faculty Electrical Engineering, Mathematics and Computer Science Department Electrical Sustainable Energy Programme Photovoltaic Materials and Devices (PVMD) Date 2016-06-15 Abstract Silicon nanoparticles (NPs) embedded in a dielectric matrix, such as silicon oxide, pose a promising candidate for all-silicon multi-junction solar cells. This material is often analysed with photoluminescence (PL) measurements. In literature, the intensities of different PL measurements are either directly compared or normalized. Normalization leads to loss of information, and direct comparison is questionable because of the many factors influencing intensity. In this thesis, a study is performed on PL spectra of Si NPs embedded in intrinsic silicon oxide, fabricated with plasma enhanced chemical vapour deposition. A novel way of scaling PL to the amount Si-Si bonds is proposed, using the phonon modes of a-Si and c-Si. Both the PL spectum and the phonon modes are measured simultaneously with a Raman spectroscope. This method makes comparison of intensities between different measurements possible. Subject photoluminescencePLnanoparticlesnanocrystalsNPNPsNCNCsquantum mechanicsquantum dotsQDQDsmultilayersuperlatticeSisiliconsilicon oxidesilicondioxideSiO2passivationdefectsRaman To reference this document use: http://resolver.tudelft.nl/uuid:2356d539-3500-4bb9-bfec-a2bc8d089b59 Part of collection Student theses Document type master thesis Rights (c) 2016 J. Quik Files PDF 2016 - Jim Quik - Scaling ... Oxide.pdf 7.64 MB Close viewer /islandora/object/uuid:2356d539-3500-4bb9-bfec-a2bc8d089b59/datastream/OBJ/view