Print Email Facebook Twitter Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching Title Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching Author Sokolovskij, R. (TU Delft Beijing Delft Institute of Intelligent Science and Technology; TU Delft Electronic Components, Technology and Materials) Sun, J. (Beijing Research Center) Santagata, F. (Peking University; Guangdong Dongguan Quality Supervision Testing Center) Iervolino, E. (Peking University; Guangdong Dongguan Quality Supervision Testing Center) Li, S. (Peking University) Zhang, G.Y. (Peking University) Sarro, Pasqualina M (TU Delft Electronic Components, Technology and Materials) Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials) Date 2016 Abstract A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O2 plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very slow etching rate (∼0.38nm/cycle), limited by oxidation depth. The proposed approach allows fine control of the oxidation enabling the formation of accurately controlled recess of very thin (20∼30nm) barrier layers. With optimized power settings, etch rates from ∼0.6 to ∼11nm/cycle were obtained. AFM results did not show any increase in surface roughness after etching, indicating that surface quality of the etched layer was not affected by the etching process. Subject AlGaN/GaNcyclic etchgate recessHEMTHEMT-sensorICP-RIEplasma oxidationsemiconductor sensor To reference this document use: http://resolver.tudelft.nl/uuid:2a30fbba-fd5d-40de-9630-1f72ee874711 DOI https://doi.org/10.1016/j.proeng.2016.11.350 ISSN 1877-7058 Source Procedia Engineering, 168, 1094-1097 Event Eurosensors 2016, 2016-09-04 → 2016-09-07, Budapest, Hungary Part of collection Institutional Repository Document type journal article Rights © 2016 R. Sokolovskij, J. Sun, F. Santagata, E. Iervolino, S. Li, G.Y. Zhang, Pasqualina M Sarro, Kouchi Zhang Files PDF 1_s2.0_S1877705816336645_main.pdf 509.64 KB Close viewer /islandora/object/uuid:2a30fbba-fd5d-40de-9630-1f72ee874711/datastream/OBJ/view