Print Email Facebook Twitter Gate-tunable high mobility remote-doped InSb/In1?xAlxSb quantum well Title Gate-tunable high mobility remote-doped InSb/In1?xAlxSb quantum well Author Yi, W. Kiselev, A.A. Thorp, J. Noah, R. Nguyen, B.M. Bui, S. Rajavel, R.D. Hussain, T. Gyure, M.F. Kratz, P. Qian, Q. Manfra, M.J. Pribiag, V.S. Kouwenhoven, L.P. Marcus, C.M. Sokolich, M. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2015-04-07 Abstract Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200?000?cm2/V?s is measured at T?=?1.8?K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 ?·mm is achieved at 1.8?K. Subject electron gasquantum wellsIII-V semiconductorsdopingatomic layer deposition To reference this document use: http://resolver.tudelft.nl/uuid:2ad08b65-ebc5-42b1-8eed-aa4aa4bda436 Publisher American Institute of Physics ISSN 0003-6951 Source https://doi.org/10.1063/1.4917027 Source Applied Physics Letters, 106 (14), 2015 Part of collection Institutional Repository Document type journal article Rights (c) 2015 AIP Files PDF Kouwenhoven_2015.pdf 879.47 KB Close viewer /islandora/object/uuid:2ad08b65-ebc5-42b1-8eed-aa4aa4bda436/datastream/OBJ/view