Print Email Facebook Twitter Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED Title Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED Author Hueting, R. J.E. (University of Twente) De Vries, H. (University of Twente) Dutta, S. (TU Delft Dynamics of Micro and Nano Systems) Annema, A. J. (University of Twente) Date 2021 Abstract The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption low-voltage ( \leq 15\text{V} ) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes. Subject Avalanche breakdowndiodelight-emitting diode (LED)powersilicon To reference this document use: http://resolver.tudelft.nl/uuid:2cb53aea-8275-42ca-a637-74af16299576 DOI https://doi.org/10.1109/LED.2021.3087362 ISSN 0741-3106 Source IEEE Electron Device Letters, 42 (8), 1188-1191 Bibliographical note Accepted Author Manuscript Part of collection Institutional Repository Document type journal article Rights © 2021 R. J.E. Hueting, H. De Vries, S. Dutta, A. J. Annema Files PDF Electrical_TCAD_Study_of_ ... on_LED.pdf 1.06 MB Close viewer /islandora/object/uuid:2cb53aea-8275-42ca-a637-74af16299576/datastream/OBJ/view