Print Email Facebook Twitter Time-of-flight studies on TiO2/CuInS2 heterojunctions Title Time-of-flight studies on TiO2/CuInS2 heterojunctions Author Hofhuis, J. Schoonman, J. Goossens, A. Faculty Applied Sciences Date 2008-01-04 Abstract Time-of-Flight (TOF) measurements have been performed on n-type TiO2/p-type CuInS2 heterojunctions. The TiO2 film thickness has been varied between 200 and 400 nm, while the CuInS2 film thickness has been fixed at 500 nm. The TOF response can be accurately modeled, if the potential drop across the p-n heterojunction with a large density of interface states is properly accounted for. Also electron transport in a space-charge region for a not fully depleted semiconductor has to be considered. The electron mobility in TiO2 is found to be 10?2?cm2?V?1?s?1, independent of the TiO2 layer thickness. The interface-state densities are 5×1011, 2×1012, and 6×1012?eV?1?cm?2 for 200, 300, and 400 nm thick TiO2 films, respectively. Subject copper compoundselectron mobilityindium compoundsinterface statesp-n heterojunctionstitanium compounds To reference this document use: http://resolver.tudelft.nl/uuid:2d458a68-dbc4-4478-81d3-1b4122c2b7ed DOI https://doi.org/10.1063/1.2826685 Publisher American Institute of Physics ISSN 0021-8979 Source http://link.aip.org/link/JAPIAU/v103/i1/p014503/s1 Source Journal of Applied Physics, 103 (1), 2008 Part of collection Institutional Repository Document type journal article Rights (c) 2008 The Author(s); American Institute of Physics Files PDF Hofhuis_2008.pdf 667.34 KB Close viewer /islandora/object/uuid:2d458a68-dbc4-4478-81d3-1b4122c2b7ed/datastream/OBJ/view