Print Email Facebook Twitter Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode Title Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode Author Nishiguchi, K. Castellanos-Gomez, A. Yamaguchi, H. Fujiwara, A. Van der Zant, H.S.J. Steele, G.A. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2015-08-03 Abstract We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS2 layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors. Subject tunnelingsiliconfield effect transistorsnegative resistanceband gap To reference this document use: http://resolver.tudelft.nl/uuid:32707453-b962-4dc6-9e6b-ea552093b37d Publisher American Institute of Physics ISSN 0003-6951 Source https://doi.org/10.1063/1.4927529 Source Applied Physics Letters, 107 (5), 2015 Part of collection Institutional Repository Document type journal article Rights © 2015 AIP Publishing Files PDF vanderZant_2015.pdf 1.03 MB Close viewer /islandora/object/uuid:32707453-b962-4dc6-9e6b-ea552093b37d/datastream/OBJ/view