Thermal inductance in GaN devices

Ye, H.; Leung, Stanley Y.Y.; Wong, K.Y.; Chen, Xianping; Lin, Kai; Fan, J.; Kjelstrup, Signe; Fan, Xuejun; Zhang, Kouchi

doi:10.1109/LED.2016.2612243

Thermal inductance in GaN devices

Title

Thermal inductance in GaN devices

Author

Ye, H. (Chongqing University; Ministry of Education of the People's Republic of China)
Leung, Stanley Y.Y. (Changzhou Institute of Technology Research for Solid State Lighting)
Wong, K.Y. (Changzhou Institute of Technology Research for Solid State Lighting)
Chen, Xianping (Chongqing University)
Lin, Kai (Changzhou Institute of Technology Research for Solid State Lighting)
Fan, J. (Changzhou Institute of Technology Research for Solid State Lighting)
Kjelstrup, Signe (Norwegian University of Science and Technology (NTNU))
Fan, Xuejun (Lamar University)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)

Date

2016

Abstract

Using the analogue of the electric inductance, we reveal the properties of the thermal inductance in GaN-based light-emitting diode devices by testing their transient thermal behaviors. We find that the devices exhibit a transient thermal response under step-down or step-up currents and observe notable inductive phenomena of the temperature response as time evolves from start up to some hundred microseconds. We define thermal inductance as the rapid change in device temperature that is opposite to the temperature change expected from the power input. These findings can promote new temperature measurements, and novel thermal analyses of high-frequency semiconductor devices that combining the thermal resistances, thermal capacitances, and thermal inductances.

Subject

Thermal analysis
Thermal inductance
Transient thermal behaviour

To reference this document use:

http://resolver.tudelft.nl/uuid:34c5e140-ec59-4c75-ac6b-c89ff27f1d93

DOI

https://doi.org/10.1109/LED.2016.2612243

ISSN

0741-3106

Source

IEEE Electron Device Letters, 37 (11), 1473-1476

Bibliographical note

Accepted author manuscript