Print Email Facebook Twitter Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor Title Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor Author Tettamanzi, G.C. Verduijn, J. Lansbergen, G.P. Blaauboer, M. Calderón, M.J. Aguado, R. Rogge, S. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2012-01-25 Abstract Semiconductor devices have been scaled to the point that transport can be dominated by only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics can govern transport when one electron is bound to the single dopant. Orbital (valley) degrees of freedom, apart from the standard spin, strongly modify the Kondo effect in such systems. Owing to the small size and the s-like orbital symmetry of the ground state of the dopant, these orbital degrees of freedom do not couple to external magnetic fields which allows us to tune the symmetry of the Kondo effect. Here we study this tunable Kondo effect and demonstrate experimentally a symmetry crossover from an SU(4) ground state to a pure orbital SU(2) ground state as a function of magnetic field. Our claim is supported by theoretical calculations that unambiguously show that the SU(2) symmetric case corresponds to a pure valley Kondo effect of fully polarized electrons. To reference this document use: http://resolver.tudelft.nl/uuid:3fb66e2e-c1e1-46c5-a459-738a7f1361bd DOI https://doi.org/10.1103/PhysRevLett.108.046803 Publisher American Physical Society ISSN 0031-9007 Source http://link.aps.org/doi/10.1103/PhysRevLett.108.046803 Source Physical Review Letters, 108 (4), 2012 Part of collection Institutional Repository Document type journal article Rights (c) 2012 The Author(s)American Physical Society Files PDF PhysRevLett.108.0468031.pdf 747.22 KB Close viewer /islandora/object/uuid:3fb66e2e-c1e1-46c5-a459-738a7f1361bd/datastream/OBJ/view