Print Email Facebook Twitter Operation of a titanium nitride superconducting microresonator detector in the nonlinear regime Title Operation of a titanium nitride superconducting microresonator detector in the nonlinear regime Author Swenson, L.J. Day, P.K. Eom, B.H. Leduc, H.G. Llombart, N. McKenney, C.M. Noroozian, O. Zmuidzinas, J. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2013-03-08 Abstract If driven sufficiently strongly, superconducting microresonators exhibit nonlinear behavior including response bifurcation. This behavior can arise from a variety of physical mechanisms including heating effects, grain boundaries or weak links, vortex penetration, or through the intrinsic nonlinearity of the kinetic inductance. Although microresonators used for photon detection are usually driven fairly hard in order to optimize their sensitivity, most experiments to date have not explored detector performance beyond the onset of bifurcation. Here, we present measurements of a lumped-element superconducting microresonator designed for use as a far-infrared detector and operated deep into the nonlinear regime. The 1?GHz resonator was fabricated from a 22?nm thick titanium nitride film with a critical temperature of 2?K and a normal-state resistivity of 100????cm. We measured the response of the device when illuminated with 6.4 pW optical loading using microwave readout powers that ranged from the low-power, linear regime to 18 dB beyond the onset of bifurcation. Over this entire range, the nonlinear behavior is well described by a nonlinear kinetic inductance. The best noise-equivalent power of 2×10?16?W/Hz1/2 at 10 Hz was measured at the highest readout power, and represents a ?10 fold improvement compared with operating below the onset of bifurcation. Subject bifurcationelectrical resistivitygrain boundariesinfrared detectorsmicrocavitiesmicromechanical resonatorsmicrosensorsmixed statesuperconducting cavity resonatorssuperconducting photodetectorssuperconducting transition temperaturethin film sensorstitanium compoundsUHF resonators To reference this document use: http://resolver.tudelft.nl/uuid:4283b96b-adbf-46c0-b1a9-4ac2a6bc7b08 DOI https://doi.org/10.1063/1.4794808 Publisher American Institute of Physics ISSN 0021-8979 Source https://doi.org/10.1063/1.4794808 Source Journal of Applied Physics, 113 (10), 2013 Part of collection Institutional Repository Document type journal article Rights © 2013 American Institute of Physics Files PDF Llombart_2013.pdf 1.64 MB Close viewer /islandora/object/uuid:4283b96b-adbf-46c0-b1a9-4ac2a6bc7b08/datastream/OBJ/view