Print Email Facebook Twitter The design of a high speed CMOS image sensor Title The design of a high speed CMOS image sensor: featuring global shutter, high dynamic range and flexible exposure control in 110nm technology Author Stampoglis, Periklis (TU Delft Electrical Engineering, Mathematics and Computer Science) Contributor Theuwissen, Albert (mentor) Charbon, Edoardo (graduation committee) Cai, Gaozhan (graduation committee) Luyssaert, Bert (graduation committee) Degree granting institution Delft University of Technology Programme Electrical Engineering Date 2019-03-18 Abstract High speed imagers find applications in many fields such as scientific and medical imaging, automotive applications, machine vision and much more. In this thesis, the design of a high speed, high dynamic range (HDR) CMOS sensor with electronic global shutter (GS) and flexible exposure control is presented. The sensor is designed in the 0.11μm CIS process, features 1k(H) x 1k(V) pixels and achieves frame rates greater that 10.000 fps.A review of the architecture of the sensor is given, along with functional illustrations for each comprising block. The quadrant-based approach is described, along with the selectable region-of-interest capability. The pixel design is a eleven-transistor (11T) pinned photodiode global shutter pixel, implementing HDR by means of two in-pixel capacitors. The design of the pipelined Sample & Hold, column gain and column-level Correlated Double Sampling (CDS) circuits are shown. Subject CMOS image sensorhigh speedHDRglobal shutter To reference this document use: http://resolver.tudelft.nl/uuid:42cf73c4-66bf-4cfa-ad85-13149e303e5f Embargo date 2019-05-31 Part of collection Student theses Document type master thesis Rights © 2019 Periklis Stampoglis Files PDF dissertation_redact_public.pdf 16.38 MB Close viewer /islandora/object/uuid:42cf73c4-66bf-4cfa-ad85-13149e303e5f/datastream/OBJ/view