Print Email Facebook Twitter Efficient Green Emission from Wurtzite AlxIn1- xP Nanowires Title Efficient Green Emission from Wurtzite AlxIn1- xP Nanowires Author Gagliano, L. (Eindhoven University of Technology) Kruijsse, M. (Eindhoven University of Technology) Schefold, J. D.D. (Center for Nanophotonics) Belabbes, A. (Friedrich Schiller University Jena) Verheijen, M.P.A.M. (Eindhoven University of Technology; Philips Research) Meuret, S. (Systems Biophysics; Center for Nanophotonics) Kölling, S. (Eindhoven University of Technology) Polman, A. (Center for Nanophotonics) Bechstedt, F. (Friedrich Schiller University Jena) Haverkort, J. E.M. (Eindhoven University of Technology) Bakkers, E.P.A.M. (TU Delft QN/Bakkers Lab; Eindhoven University of Technology; Kavli institute of nanoscience Delft) Date 2018 Abstract Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires. Subject aluminum indium phosphidedirect band gapgreenSemiconductor nanowiresolid state lightingwurtzite To reference this document use: http://resolver.tudelft.nl/uuid:4813a108-e894-414b-b852-ea9146eca468 DOI https://doi.org/10.1021/acs.nanolett.8b00621 ISSN 1530-6984 Source Nano Letters: a journal dedicated to nanoscience and nanotechnology, 18 (6), 3543-3549 Part of collection Institutional Repository Document type journal article Rights © 2018 L. Gagliano, M. Kruijsse, J. D.D. Schefold, A. Belabbes, M.P.A.M. Verheijen, S. Meuret, S. Kölling, A. Polman, F. Bechstedt, J. E.M. Haverkort, E.P.A.M. Bakkers Files PDF acs.nanolett.8b00621.pdf 3.51 MB Close viewer /islandora/object/uuid:4813a108-e894-414b-b852-ea9146eca468/datastream/OBJ/view