An energy-efficient capacitively biased diode-based temperature sensor in 55-nm CMOS

Tang, Z.; Fang, Yun; Yu, Xiao Peng; Tan, Nick Nianxiong; Shi, Zheng; Harpe, Pieter

doi:10.1109/LSSC.2021.3124471

An energy-efficient capacitively biased diode-based temperature sensor in 55-nm CMOS

Title

An energy-efficient capacitively biased diode-based temperature sensor in 55-nm CMOS

Author

Tang, Z. (TU Delft Electronic Instrumentation; Zhejiang University; Eindhoven University of Technology)
Fang, Yun (Zhejiang University)
Yu, Xiao Peng (Zhejiang University)
Tan, Nick Nianxiong (Zhejiang University)
Shi, Zheng (Zhejiang University)
Harpe, Pieter (Eindhoven University of Technology)

Date

2021

Abstract

This work presents an energy-efficient diode-based CMOS temperature sensor. It is based on the capacitively biased diode (CBD) working principle and can operate with a 1-V supply voltage. Instead of using a separate CBD front-end and ADC, a new architecture is proposed in which the CBD front-end is directly embedded into the 1st stage of a 1-bit 2nd-order switched-capacitor ΣΔ-ADC, thereby improving both energy efficiency and accuracy. The circuit was fabricated in a standard 55-nm CMOS process and occupies an active area of 0.021 mm². The measured inaccuracy is ±0.6 °C (3σ) from -55 °C to 125 °C after a 1-point calibration. Furthermore, it consumes 2.2 μW and achieves a resolution of 15 mK in a conversion time of 6.4 ms, which corresponds to a competitive resolution FoM of 3.2 pJ·K²

Subject

Capacitively biased
CMOS temperature sensor
Diode
Energy efficient

To reference this document use:

http://resolver.tudelft.nl/uuid:6704de9f-9ddc-4894-a271-731089773ce7

DOI

https://doi.org/10.1109/LSSC.2021.3124471

ISSN

2573-9603

Source

IEEE Solid State Circuits Letters, 4, 210-213

Part of collection

Institutional Repository