Print Email Facebook Twitter Kinetics of tungsten low-pressure chemical-vapor deposition using WF6 and SiH4 studied by in situ growth-rate measurements Title Kinetics of tungsten low-pressure chemical-vapor deposition using WF6 and SiH4 studied by in situ growth-rate measurements Author Ammerlaan, J.A.M. Van der Put, P.J. Schoonman, J. Date 1993 Subject Thin filmCrystal growthExperimental studyTungstenChemical vapor depositionLow pressureKineticsIn situProcess control To reference this document use: http://resolver.tudelft.nl/uuid:6742381d-409c-4065-9dbd-5fca2178ed83 ISSN 0021-8979 Source Journal of Applied Physics 73(9), 4631-4636. (1993) Part of collection Institutional Repository Document type journal article Files PDF 862073.pdf 600.93 KB Close viewer /islandora/object/uuid:6742381d-409c-4065-9dbd-5fca2178ed83/datastream/OBJ/view