Print Email Facebook Twitter Spin-orbit interaction in a dual gated InAs/GaSb quantum well Title Spin-orbit interaction in a dual gated InAs/GaSb quantum well Author Beukman, A.J.A. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) de Vries, F.K. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) van Veen, J. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Skolasinski, R.J. (TU Delft QRD/Wimmer Group; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Wimmer, M.T. (TU Delft QRD/Wimmer Group; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Qu, F. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) De Vries, David T. (Student TU Delft; Kavli institute of nanoscience Delft) Nguyen, Binh Minh (HRL Laboratories) Kouwenhoven, Leo P. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Microsoft Quantum Lab Delft; Kavli institute of nanoscience Delft) Date 2017 Abstract The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands. To reference this document use: http://resolver.tudelft.nl/uuid:7717b72a-75cf-4692-829b-5ad7598f8e42 DOI https://doi.org/10.1103/PhysRevB.96.241401 ISSN 2469-9950 Source Physical Review B, 96 (24) Part of collection Institutional Repository Document type journal article Rights © 2017 A.J.A. Beukman, F.K. de Vries, J. van Veen, R.J. Skolasinski, M.T. Wimmer, F. Qu, David T. De Vries, Binh Minh Nguyen, Leo P. Kouwenhoven Files PDF PhysRevB.96.241401.pdf 1.95 MB Close viewer /islandora/object/uuid:7717b72a-75cf-4692-829b-5ad7598f8e42/datastream/OBJ/view